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| SUD70N03-06P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 70 70 rDS(on) (W) 0.006 @ VGS = 10 V 0.009 @ VGS = 4.5 V D TrenchFETr Power MOSFET D High Current D 100% Rg Tested APPLICATIONS D DC/DC Converters - Optimized For Low Side D Synchronous Rectifiers D TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD70N03-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Avalanche Current, single pulse Avalanche Energy, single pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range Conduction)a L = 0 1 mH 0.1 TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 "20 70 70b 100 27 45 101 88 8.3a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package. Document Number: 72238 S-40427--Rev. C, 15-Mar-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.4 Maximum 18 50 1.7 Unit _C/W C/W 1 SUD70N03-06P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0072 50 0.0046 0.006 0.0105 0.009 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W f = 1 MHz 0.9 VDS = 15 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 3100 565 255 21 10 7.5 2.0 12 12 30 10 3.4 20 20 45 15 ns W 30 nC p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) 5V I D - Drain Current (A) 80 100 Transfer Characteristics 120 60 80 4V 40 TC = 125_C 20 25_C -55_C 0 40 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72238 S-40427--Rev. C, 15-Mar-04 2 SUD70N03-06P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 120 100 GFS - Transconductance (S) 80 60 40 20 0 0 10 20 30 40 50 125_C TC = -55_C 25_C RDS(on) - On-Resistance (W) 0.012 0.015 Vishay Siliconix On-Resistance vs. Drain Current 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0.000 0 20 40 60 80 100 ID - Drain Current (A) 4000 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss ID - Drain Current (A) 10 VDS = 15 V ID = 50 A Capacitance Ciss V GS - Gate-to-Source Voltage (V) Gate Charge 8 C - Capacitance (pF) 6 4 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage rDS(on) - On-Resiistance (Normalized) 1.5 TJ = 150_C 10 1.0 TJ = 25_C 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72238 S-40427--Rev. C, 15-Mar-04 www.vishay.com 3 SUD70N03-06P Vishay Siliconix THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 30 25 100 I D - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) I D - Drain Current (A) New Product 1000 Limited by rDS(on) Safe Operating Area 10, 100 ms 10 1 ms 10 ms 100 ms 1s 10 s TA = 25_C Single Pulse 100 s dc 1 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72238 S-40427--Rev. C, 15-Mar-04 |
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